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 FFP15S60S — STEALTH? II Diode www.fairchildsemi.com 2 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Min. Typ. Max. Unit VF1 IF = 15 A IF = 15 A TC = 25oC TC = 125oC - - 2.1 1.6 2.6 - V IR1 VR = 6 00 V VR = 6 00 V TC = 25oC TC = 125oC - - - - 100 500 μA trr IF = 1 A, diF/dt = 100 A/μs, VR = 30 V TC = 25oC - 21 30 ns trr Irr S factor Qrr IF = 15 A, diF/dt = 200 A/μs, VR = 390 V TC = 25oC - - - - 23 2.5 0.7 29 35 - - - ns A nC trr Irr S factor Qrr IF = 15 A, diF/dt = 200 A/μs, VR = 390 V TC = 125oC - - - - 55 4.3 1.1 118 - - - - ns A nC WAVL Avalanche Energy ( L = 40 mH) 20 - - mJ Test Circuit and Waveforms Notes: 1: Pulse: Test Pulse width = 300 μs, Duty Cycle = 2% ?2007 Fairchild Semiconductor Corporation FFP15S60S Rev. C1 Figure 1. Di ode Re verse Recovery Test Ci rcuit & Waveform Figure 2. Unclamped I nductive Switching Test Circuit & Waveform |